This paper demonstrates the successful lab-to-fab transition of dynamic secondary-ion mass spectrometry (SIMS). In comparison to traditional lab SIMS, the in-line version is optimized for automated wafer and measurement sequence
handling and high throughput measurements in small areas. Key advantages are fast turn-around time, reduced scrap, increased yield, and the measured wafer can continue processing in the manufacturing line. The benefits of in-line SIMS
in the production environment are demonstrated for several use cases: matching and monitoring the long-term stability of epitaxy tools on monitor wafers, process optimization and monitoring of epitaxial Si and SiGe layers on blanket and patterned wafers with blanket metrology targets, measurement of implant and dopant profiles on blanket and patterned wafers, and characterization of the Ge and B diffusion in multi-layer stacks stimulated by high-temperature annealing.
Additionally, the characterization of the source/drain epitaxy in a fully integrated nanosheet gate-all-around transistor architecture is demonstrated and discussed. The results are compared to off-line lab SIMS and alternative methods where
available.
Keywords: In-line metrology, SIMS, gate-all-around, nanosheet, epitaxy, diffusion, dopant profiling, implant profiling
